Observation of Temperature Independent Anomalous Hall Effect in Thin Bismuth from Near Absolute Zero to 300 K Temperature

Abstract

We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected temperature dependent longitudinal resistance consistent with semi-metallic bismuth, however it surprisingly showed no hint of a magnetoresistance for magnetic fields between $\pm 30$ T. Even though bismuth is a diamagnetic material which {\it a priori} does not break time-reversal symmetry (TRS), our analysis of the reconstructed conductivities points towards the AHE to be of the intrinsic type, which does not emanate from magnetic impurities. Finally, as pure bismuth has been shown numerically to host a Berry curvature at its surface which breaks inversion symmetry, we propose it as a possible explanation for the temperature independent AHE observed here.

References in corpus (13)

• Titanic Magnetoresistance in WTe2
• Universal Scaling Behavior of Anomalous Hall Effect and Anomalous Nernst Effect in Itinerant Ferromagnets
• Colloquium: Quantum anomalous Hall effect
• Intrinsic vs. extrinsic anomalous Hall effect in ferromagnets
• Anomalous Hall Effect in Weyl Metals
• Evidence for Higher order topology in Bi and Bi${}_{0.92}$Sb${}_{0.08}$
• Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
• Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials
• Surface induced electronic Berry curvature in Berry curvature free bulk materials
• Anomalous Hall effect in disordered Weyl semimetals
• Anomalous Hall Effect in Bismuth
• Method of Mechanical Exfoliation of Bismuth with Micro-Trench Structures
• Anomalous Hall Effect in Thin Bismuth