Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H

Abstract

Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\sim$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\sim$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.

References in corpus (11)

• Microwave Dielectric Loss at Single Photon Energies and milliKelvin Temperatures
• TMM-Fast: A Transfer Matrix Computation Package for Multilayer Thin-Film Optimization
• Infrared dielectric properties of low-stress silicon nitride
• Thin film dielectric microstrip kinetic inductance detectors
• Full-Array Noise Performance of Deployment-Grade SuperSpec mm-wave On-Chip Spectrometers
• Terahertz Band-Pass Filters for Wideband Superconducting On-chip Filter-bank Spectrometers
• Suppression of radiation loss in high kinetic inductance superconducting co-planar waveguides
• DESHIMA 2.0: development of an integrated superconducting spectrometer for science-grade astronomical observations
• Hydrogenated Amorphous Silicon Carbide: A Low-loss Deposited Dielectric for Microwave to Submillimeter Wave Superconducting Circuits
• Development of Superconducting On-chip Fourier Transform Spectrometers
• Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators