Infrared dielectric properties of low-stress silicon oxide

Abstract

Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

4 pages, 3 figures, 1 table

References in corpus (2)

• Infrared dielectric properties of low-stress silicon nitride
• Investigation of infrared phonon modes in multiferroic single-crystal FeTe${}_2$O${}_5$Br

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• Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H