Graphene magnetoresistance control by photoferroelectric substrate

Abstract

Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by the bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to new a magnetic dimension and advance wireless operation for sensors and field-effect transistors.

7 pages, 6 figures, journal paper

References in corpus (12)

• Weak localisation magnetoresistance and valley symmetry in graphene
• Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited
• Gate-controlled non-volatile graphene-ferroelectric memory
• Graphene field effect transistors with ferroelectric gating
• Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3
• Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
• Giant magnetoresistance of Dirac plasma in high-mobility graphene
• Optical Writing of Magnetic Properties by Remanent Photostriction
• Photovoltaic effect and photopolarization in Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal
• Photovoltaic-ferroelectric materials for the realization of all-optical devices
• Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor
• On the photovoltaic effect asymmetry in ferroelectrics