C-Band Lithium Niobate on Silicon Carbide SAW Resonator With Figure-of-Merit of 124 at 6.5 GHz
arXiv:2402.16732 · doi:10.1109/JMEMS.2024.3423768
Abstract
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (kt2) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide (SiC) platform, featuring an excellent figure-of-merit (FoM = kt2*Q ) of 124 at 6.5 GHz, the highest FoM reported in this frequency range. The resonator frequency upscaling is achieved through wavelength () reduction and the use of thin aluminum (Al) electrodes. The LN/SiC waveguide and synchronous resonator design collectively enable effective acoustic energy confinement for a high FoM, even when the normalized thickness of LN approaches a scale of 0.5 to 1. To perform a comprehensive study, we also designed and fabricated five additional resonators, expending the studied ranging from 480 to 800 nm, in the same 500 nm-thick transferred Y-cut thin-film LN on SiC. The fabricated SH-SAW resonators, operating from 5 to 8 GHz, experimentally demonstrate a kt2 from 20.3% to 22.9% and a Q from 350 to 575, thereby covering the entire C-band with excellent performance.
4 pages, 5 figures, 1 table
References in corpus (4)
- Complementary-Switchable Dual-Mode SHF Scandium-Aluminum Nitride BAW Resonator
- Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz with 2.38 dB IL and 18.2% FBW
- Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k2 of 5.1% at 50.74 GHz
- 23.8-GHz Acoustic Filter in Periodically Poled Piezoelectric Film Lithium Niobate With 1.52-dB IL and 19.4% FBW
Cited by in corpus (3)
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