Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
arXiv:2401.03455 · doi:10.1039/D4NH00019F
Abstract
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.
13 pages, 10 figures
References in corpus (31)
- Topological Crystalline Insulators
- Surface States of the Topological Insulator Bi_{1-x}Sb_x
- Classical higher-order topological insulators
- Higher-order Topology of Axion Insulator EuInAs
- Experimental discovery of bulk-disclination correspondence
- Z2-topology in nonsymmorphic crystalline insulators: Mobius twist in surface states
- Bulk-boundary correspondence from the inter-cellular Zak phase
- Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors
- Robust spin-polarized midgap states at step edges of topological crystalline insulators
- Dislocation as a bulk probe of higher-order topological insulators
- Bound states at partial dislocation defects in multipole higher-order topological insulators
- Quantum Spin Hall Effect in IV-VI Topological Crystalline Insulators
- On the topological immunity of corner states in two-dimensional crystalline insulators
- Topological Crystalline Insulator Nanostructures
- Electrically Tunable Quantum Spin Hall State in Topological Crystalline Insulator Thin films
- Topological Zero-Dimensional Defect and Flux States in Three-Dimensional Insulators
- Bulk-boundary-defect correspondence at disclinations in rotation-symmetric topological insulators and superconductors
- Coupling lattice instabilities across the interface in ultrathin oxide heterostructures
- Conductance Quantization in PbTe Nanowires
- Realization of the Chern insulator and Axion insulator phases in antiferromagnetic -- heterostructures
- Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene
- Corner states, hinge states and Majorana modes in SnTe nanowires
- Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states
- Interaction effects in a 1D flat band at a topological crystalline step edge
- Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping
- Engineering axion insulator phase in superlattices with inversion symmetry breaking
- Formation of pentagonal atomic chains in BCC Fe nanowires
- The structure of thin boron nanowires predicted using evolutionary computations
- Topological electronic structure of twin boundaries and twinning superlattices in the SnTe material class
- Topological phase diagram of Pb1-xSnxSe1-yTey
- Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe