Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices

Abstract

We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of the micromagnetic simulation. This device realizes magnetization switching via spin-orbit torque(SOT) and voltage-controlled magnetic anisotropy (VCMA) which originate from 2D-Dirac electronic structure. We reveal that the device operation is extremely robust against circuit delay and signal-to-noise ratio. We demonstrate that the WER on the order of approximately $10^{-4}$ or below is achieved around room temperature due to steep change in VCMA. Also, we show that the larger SOT improves thermal stability factor. This study provides a next perspective for developing voltage-driven spintronic devices with ultra-low power consumption.

arXiv comment6 pages, 5 figures

References in corpus (19)

• Topological Insulator Materials
• Surface Magnetoelectric Effect in Ferromagnetic Metal Films
• Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure
• A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching
• Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001)
• Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator
• Electric-field control of spin-orbit torque in a magnetically doped topological insulator
• Voltage-assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers
• Deterministic magnetization switching using lateral spin-orbit torque
• Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
• Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators
• Electrically Tunable Magnetism in Magnetic Topological Insulators
• Electric-field control of spin-orbit torques in perpendicularly magnetized W/CoFeB/MgO films
• Magnetic-proximity-induced magnetoresistance on topological insulators
• Electrostatically Controlled Magnetization Rotation in Ferromagnet-Topological Insulator Planar Structures
• Carrier dependent ferromagnetism in chromium doped topological insulator $C{r}_{0.2}B{i}_{x}S{b}_{1.8-x}T{e}_3$
• Electric-Field-Induced Spin Resonance in Antiferromagnetic Insulators: Inverse Process of the Dynamical Chiral Magnetic Effect
• Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures
• Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers