Carrier dependent ferromagnetism in chromium doped topological insulator $C{r}_{0.2}B{i}_{x}S{b}_{1.8-x}T{e}_3$

Abstract

Carrier-independent ferromagnetism of chromium doped topological insulator $B{i}_{x}S{b}_{2-x}T{e}_3$ thin films,which cannot be explained by current theory of dilute magnetic semiconductor, has been reported recently. To study if it is related to the distinctive surface state of topological insulator, we studied the structural, magnetic and transport characters of $C{r}_{0.2}B{i}_{x}S{b}_{1.8-x}T{e}_3$ single crystals. The Curie temperature $T_c$, which is determined from magnetization and anomalous Hall effect measurements by Arrott plots, is found to be proportional to $p^{1/3}$, where p is the hole density. This fact supports a scenario of RKKY interaction with mean-field approximation. This carrier density dependent nature enables tuning and controlling of the magnetic properties by applying a gate voltage in the future science researches and spintronics applications.

6 pages, 3 figures

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Cited by in corpus (6)

• Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Cr${}_x$(Bi${}_{0.1}$Sb${}_{0.9}$)${}_{2-x}$Te${}_3$
• RKKY Interaction On Surfaces of Topological Insulators With Superconducting Proximity Effect
• Observation of superparamagnetism in coexistence with quantum anomalous Hall C=$\pm$1 and C=0 Chern states
• Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering
• Numerical analysis of voltage-controlled magnetization switching operation in magnetic-topological-insulator-based devices
• Effects of Long-Range Interactions on Magnetic Excitations and Phase Transition on a Magnetically Frustrated Square Lattice