Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages

Abstract

Excess micromotion is detrimental to accurate qubit control of trapped ions, thus measuring and minimizing it is crucial. In this paper, we present a simple approach for measuring and suppressing excess micromotion of trapped ions by leveraging the existing laser-driven qubit transition scheme combined with direct scanning of dc voltages. The compensation voltage is deduced by analyzing the Bessel expansion of a scanned qubit transition rate. The method provides a fair level of sensitivity for practical quantum computing applications, while demanding minimal deviation of trap condition. By accomplishing compensation of excess micromotion in the qubit momentum-excitation direction, the scheme offers an additional avenue for excess micromotion compensation, complementing existing compensation schemes.

11 pages, 6 figures

References in corpus (8)

• Quantum computing with trapped ions
• Ultrafast Gates for Single Atomic Qubits
• Trapped-ion probing of light-induced charging effects on dielectrics
• Sideband cooling and coherent dynamics in a microchip multi-segmented ion trap
• Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation
• Heating and ion transport in a Y-junction surface-electrode trap
• Ultrafast, high repetition rate, ultraviolet, fiber based laser source: application towards Yb+ fast quantum-logic
• Measurement of ion displacement via RF power variation for excess micromotion compensation

Cited by in corpus (3)

• Photo-induced charge carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions
• A silicon-based ion trap chip protected from semiconductor charging
• Radio-Frequency Pseudo-Null Induced by Light in an Ion Trap