paper

Non-adiabatic Berry phase for semiconductor heavy holes under the coexistence of Rashba and Dresselhaus spin-orbit interactions

arXiv:2302.07436 · doi:10.1103/PhysRevB.108.125432

Abstract

We formulate the non-Abelian Berry connection (tensor ) and phase (matrix ) for a multiband system and apply them to semiconductor holes under the coexistence of Rashba and Dresselhaus spin-orbit interactions. For this purpose, we focus on the heavy-mass holes confined in a SiGe two-dimensional quantum well, whose electronic structure and spin texture are explored by the extended approach. The strong intersubband interaction in the valence band causes quasi-degenerate points except for point of the Brillouin zone center. These points work as the singularity and change the Abelian Berry phase by the quantization of under the adiabatic process. To explore the influence by the non-adiabatic process, we perform the contour integral of faithfully along the equi-energy surface by combining the time-dependent Schrödinger equation with the semi-classical equation-of-motion for cyclotron motion and then calculate the energy dependence of computationally. In addition to the function as a Dirac-like singularity, the quasi-degenerate point functions in enhancing the intersubband transition via the non-adiabatic process. Consequently, the off-diagonal components generate both in and , and the simple -quantization found in the Abelian Berry phase is violated. More interestingly, these off-diagonal terms cause "resonant repulsion" at the quasi-degenerate energy and result in the discontinuity in the energy profile of .

21 pages, 9 figures

References in corpus (13)