Temperature dependence of photoluminescence intensity and spin contrast in nitrogen-vacancy centers

Abstract

We report on measurements of the photoluminescence (PL) properties of single nitrogen-vacancy (NV) centers in diamond at temperatures between 4-300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10-100 K that recovers to high levels below and above. Further, we find a rich dependence on magnetic bias field and crystal strain. We develop a comprehensive model based on spin mixing and orbital hopping in the electronic excited state that quantitatively explains the observations. Beyond a more complete understanding of the excited-state dynamics, our work provides a novel approach for probing electron-phonon interactions and a predictive tool for optimizing experimental conditions for quantum applications.

Companion paper: arXiv:2304.02521 | Model: https://github.com/sernstETH/nvratemodel

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Cited by in corpus (8)

• Temperature Dependent Photophysics of Single NV Centers in Diamond
• Modeling temperature-dependent population dynamics in the excited state of the nitrogen-vacancy center in diamond
• Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride
• Towards dislocation-driven quantum interconnects
• Charge and Spin Dynamics and Destabilization of Shallow Nitrogen-Vacancy Centers under UV and Blue Excitation
• Flux-trapping characterization for superconducting electronics using a cryogenic widefield N-$V$ diamond microscope
• Predictive tracking of the NV Center based on external temperature sensors
• Elucidating the Inter-system Crossing of the Nitrogen-Vacancy Center up to Megabar Pressures