Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Abstract

Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C=2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

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Cited by in corpus (9)

• Optically addressable spin defects coupled to bound states in the continuum metasurfaces
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• Heterogeneous integration of solid state quantum systems with a foundry photonics platform
• Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
• Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform
• Homogeneous Free-Standing Nanostructures from Bulk Diamond over Millimeter Scales for Quantum Technologies
• Scalable construction of hybrid quantum photonic cavities
• Designing metasurface optical interfaces for solid-state qubits using many-body adjoint shape optimization
• Energy transfer between localized emitters in photonic cavities from first principles