Coherent Spin Preparation of Indium Donor Qubits in Single ZnO Nanowires

Abstract

Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The inhomogeneous optical linewidth of single nanowires (60 GHz) is within a factor of 2 of bulk single-crystalline ZnO. Spin initialization via optical pumping is demonstrated and coherent population trapping is observed. The two-photon absorption width approaches the theoretical limit expected due to the hyperfine interaction between the indium nuclear spin and the donor-bound electron.

References in corpus (6)

• Quantum Computing
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Coherent Population Trapping of Single Spins in Diamond Under Optical Excitation
• Coherent Population Trapping of an Electron Spin in a Single Negatively Charged Quantum Dot
• Prospects for measurement-based quantum computing with solid state spins
• Optical spin control and coherence properties of acceptor bound holes in strained GaAs

Cited by in corpus (3)

• Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
• Hyperfine spectroscopy and fast, all-optical arbitrary state initialization and readout of a single, ten-level ${}^{73}$Ge vacancy nuclear spin qudit in diamond
• Properties of donor qubits in ZnO formed by indium ion implantation