Widely tunable 2 $\mu$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

Abstract

Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si${}_3$N${}_4$ photonic integrated circuits offers an attractive platform. Herein, we exploit the low-loss features of Si${}_3$N${}_4$ waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si${}_3$N${}_4$ Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of 80 nm (1937-2017 nm). The low-loss performance of several fundamental Si${}_3$N${}_4$ building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibit transmission loss as low as 0.15 dB/cm, the 90${}^{\circ }$ bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB.

Cited by in corpus (1)

• Design of broadband optical gain in GaSb-based waveguide amplifiers with asymmetric quantum wells