18 citations · 81 across the 13 of their papers we have counts for
14 papers
Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um
Markus Peil, Maja Wasiluk, Ziemowit Olinkiewicz +11
A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission w…
Temperature Dependence of the Refractive Index for AlAsGaSb
Helena Janowska, Wojciech Charaszkiewicz, Maja Wasiluk +6
Accurate design and optimization of photonic multilayer structures like distributed Bragg reflectors (DBRs) require precise knowledge of material optical constants, particularly th…
Time-domain optical coherence tomography at 2 using GaSb-based broadband superluminescent diode
Ifte Khairul Aam Bhuiyan, Alejandro Martinez Jimenez, Ramona Cernat +8
We report a time-domain optical coherence tomography (TD-OCT) system operating in the 2 spectral region, enabled by a GaSb-based superluminescent diode (SLD). The spe…
Design of broadband optical gain in GaSb-based waveguide amplifiers with asymmetric quantum wells
Ifte Khairul Alam Bhuiyan, Joonas Hilska, Markus Peil +2
A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 μm is presented. By employing asymmetric GaInSb/AlGaAsSb quantum we…
Fast Recovery Dynamics of GaSbBi-based SESAMs for high-fluence operation
Maximilian C. Schuchter, Joonas Hilska, Markus Peil +4
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SE…
Electronic properties of metamorphic GaSbBi films on GaAs
Joonas Hilska, Janne Puustinen, Eero Koivusalo +1
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates.…
Micro-transfer printing of GaSb optoelectronics chips for mid-infrared silicon photonics integrated circuits
Heidi Tuorila, Jukka Viheriälä, Yeasir Arafat +4
3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons, and t…
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Teemu Hakkarainen, Joonas Hilska, Arttu Hietalahti +10
Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission windows are essential for practi…
Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes
Lucie Leguay, Abhiroop Chellu, Joonas Hilska +4
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-cla…
Strain-free GaSb quantum dots as single-photon sources in the telecom S-band
Johannes Michl, Giora Peniakov, Andreas Pfenning +7
Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high inter…
Widely tunable 2 m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector
Nouman Zia, Samu-Pekka Ojanen, Jukka Viheriala +3
Tunable lasers emitting at a 2-3 m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaS…
Highly uniform GaSb quantum dots with indirect-direct bandgap crossover at telecom range
Abhiroop Chellu, Joonas Hilska, Jussi-Pekka Penttinen +1
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The…
Nanohole etching in AlGaSb with Ga droplets
Joonas Hilska, Abhiroop Chellu, Teemu Hakkarainen
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270°C to 500°C, allowing a wide range of tunability of the nanohole density. By le…
Epitaxial phases of high Bi content GaSbBi alloys
Joonas Hilska, Eero Koivusalo, Janne Puustinen +2
GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. Th…