45 citations · 92 across the 6 of their papers we have counts for
6 papers
Fast Recovery Dynamics of GaSbBi-based SESAMs for high-fluence operation
Maximilian C. Schuchter, Joonas Hilska, Markus Peil +4
Modelocked lasers operating at 2-3 um wavelength region are interesting for various spectroscopic applications. To this end, GaSb-based semiconductor saturable absorber mirrors (SE…
Electronic properties of metamorphic GaSbBi films on GaAs
Joonas Hilska, Janne Puustinen, Eero Koivusalo +1
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates.…
Widely tunable 2 m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector
Nouman Zia, Samu-Pekka Ojanen, Jukka Viheriala +3
Tunable lasers emitting at a 2-3 m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaS…
Epitaxial phases of high Bi content GaSbBi alloys
Joonas Hilska, Eero Koivusalo, Janne Puustinen +2
GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. Th…
Field emission from self-catalyzed GaAs nanowires
Filippo Giubileo, Antonio Di Bartolomeo, Laura Iemmo +5
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-…
Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique
Eero Koivusalo, Teemu Hakkarainen, Mircea Guina
Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of temp…