Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
arXiv:2210.12973 · doi:10.1038/s41467-023-38256-4
Abstract
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.
6 pages, 4 figures
References in corpus (8)
- Electrically detected interferometry of Majorana fermions in a topological insulator
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Weak antilocalization and localization in disordered and interacting Weyl semimetals
- Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
- Why is the bulk resistivity of topological insulators so small?
- Low carrier concentration crystals of the topological insulator BiSbTeSe: a magnetotransport study
- Enhanced electron dephasing in three-dimensional topological insulators