Probing itinerant carrier dynamics at the diamond surface using single nitrogen vacancy centers
arXiv:2210.07820 · doi:10.1063/5.0130761
Abstract
Color centers in diamond are widely explored for applications in quantum sensing, computing, and networking. Their optical, spin, and charge properties have been extensively studied, while their interactions with itinerant carriers are relatively unexplored. Here we show that NV centers situated within 10 nm of the diamond surface can be converted to the neutral charge state via hole capture. By measuring the hole capture rate, we extract the capture cross section, which is suppressed by proximity to the diamond surface. The distance dependence is consistent with a carrier diffusion model, indicating that the itinerant carrier lifetime can be long, even at the diamond surface. Measuring dynamics of near-surface NV centers offers a new tool for characterizing the diamond surface and investigating charge transport in diamond devices.
References in corpus (7)
- High-fidelity projective readout of a solid-state spin quantum register
- Efficient readout of a single spin state in diamond via spin-to-charge conversion
- Long-term data storage in diamond
- Efficient electrical spin readout of NV- centers in diamond
- Optical activation and detection of charge transport between individual color centers in room-temperature diamond
- Charge State Dynamics and Optically Detected Electron Spin Resonance Contrast of Shallow Nitrogen-Vacancy Centers in Diamond
- Probing charge dynamics in diamond with an individual color center