Observation of gapless nodal-line states in NdSbTe

Abstract

Lanthanide (Ln) based systems in the ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln 4f electrons. In this study, we carried out a thorough study of a LnSbTe system - NdSbTe - by using angle-resolved photoemission spectroscopy along with first-principles calculations and thermodynamic measurements. We experimentally detect the presence of multiple gapless nodal-line states, which is well supported by first-principles calculations. A dispersive and an almost non-dispersive nodal-line exist along the bulk X-R direction. Another nodal-line is present well below the Fermi level across the G- M direction, which is formed by bands with high Fermi velocity that seem to be sensitive to light polarization. Our study provides an insight into the electronic structure of a new LnSbTe material system that will aid towards understanding the connection of Ln elements with topological electronic structure in these systems.

34 pages, 12 figures; Supplemental Material included

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• Low-lying Electronic Structure of Rare-Earth Based Topological Nodal Line Semimetal Candidate DySbTe
• Electronic Structure of a Nodal Line Semimetal Candidate TbSbTe
• Electronic band structure of a nodal line semimetal candidate ErSbTe
• Dirac Dispersions and Fermi Surface Nesting in LaCuSb${}_2$
• Evolution of Magnetoresistance in the magnetic topological semimetals NdSbxTe2-x