Anti-site defect-induced disorder in compensated topological magnet MnBi${}_{2-x}$Sb${}_x$Te${}_4$

Abstract

The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi${}_{2-x}$Sb${}_x$Te${}_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)${}_{\mathrm{Mn}}$ anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

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Cited by in corpus (5)

• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Ubiquitous order-disorder transition in the Mn antisite sublattice of the (MnBi${}_2$Te${}_4$)(Bi${}_2$Te${}_3$)${}_n$ magnetic topological insulators
• Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer
• Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4
• Defect-induced displacement of topological surface state in quantum magnet MnBi${}_2$Te${}_4$