Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl${}_2$Si${}_2$

Abstract

We explore the electronic and topological properties of single crystal SrAl${}_2$Si${}_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl${}_2$Si${}_2$, with low carrier density.

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Cited by in corpus (1)

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