Probing the Fermi Surface of 3D Dirac Semimetal CdAs through de Haas-van Alphen Technique
arXiv:1501.01175 · doi:10.1103/PhysRevB.91.155139
Abstract
We have observed Shubnikov-de Haas and de Haas-van Alphen effect in the single crystals of three dimensional Dirac semimetal CdAs upto 50 K, traceable at field as low as 2 T and 1 T, respectively. The values of Fermi wave vector, Fermi velocity, and effective cyclotron mass of charge carrier, calculated from both the techniques, are close to each other and match well with the earlier reports. However, the de Haas-van Alphen effect clearly reflects the existence of two different Fermi surface cross-sections along certain direction and a non-trivial Berry's phase which is the signature of 3D Dirac Fermion in CdAs.
7 pages, 9 figures
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- Determination of the crystal field splitting energy in Cd3As2 using magnetooptics
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- Bulk Rashba spin splitting and Dirac surface state in -type (BiSbSe single crystal