Room-Temperature Quantum Emitter in Aluminum Nitride

Abstract

A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0)<0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.

References in corpus (5)

• Coherent control of single spins in silicon carbide at room temperature
• Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics
• Dynamical Decoupling of a single electron spin at room temperature
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Second harmonic generation in phase matched aluminum nitride waveguides

Cited by in corpus (3)

• Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
• Polarization study of single color centers in aluminum nitride
• Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens