Enhancement of chiral edge currents in ($d$+1)-dimensional atomic Mott-band hybrid insulators

Abstract

We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.

arXiv comment27 Pages, 10 Figures

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Cited by in corpus (8)

• First-order photon condensation in magnetic cavities: A two-leg ladder model
• Observation of counterflow superfluidity in a two-component Mott insulator
• Persistent currents in ultracold gases
• Many-body Physics of Ultracold Alkaline-Earth atoms with SU($N$)-symmetric interactions
• Systematic large flavor fTWA approach to interaction quenches in the Hubbard model
• Vortex supersolid in the XY model with tunable vortex fugacity
• Effective spin model with anisotropic exchange interactions for the spin-orbit coupled Hubbard model at half-filling
• Unit-density SU(3) Fermi-Hubbard Model with Spin Flavor Imbalance