Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor

Abstract

A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for low contact resistance between semimetal and TMDC semiconductor contacts from a quantum transport perspective. The simulation results compare favorably with recent experiments. Furthermore, the results show that the contact resistance of a Bismuth-MoS2 contact can be further reduced by engineering the dielectric environment and doping the TMDC material to <100 $\Omega$.$\mu$m. The quantum transport simulation indicates the possibility to achieve an ultrashort contact transfer length of ~1 nm, which can allow aggressive scaling of the contact size.

References in corpus (4)

• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
• Role of Fermi-level pinning in nanotube Schottky diodes
• Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

Cited by in corpus (2)

• Semimetal Contacts to Monolayer Semiconductor: Weak Metalization as an Effective Mechanism to Schottky Barrier Lowering
• Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling