Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves
arXiv:2203.12839 · doi:10.1073/pnas.2216367120
Abstract
Recently, evidence for a conducting surface state below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the conducting surface state and the bulk phase of FeSi were probed via electrical resistivity measurements as a function of temperature T, magnetic field B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic field modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared to those of the Kondo insulator SmB6 to address the question of whether FeSi is a d-electron analogue of an f-electron Kondo insulator and, in addition, a topological Kondo insulator. The overall behavior of the magnetoresistance MR of FeSi at temperatures above and below the onset temperature (T_S) 19 K of the conducting surface state is similar to that of SmB6. The two energy gaps, inferred from the resistivity data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of T_S. This behavior is similar to that reported for SmB6, except that the two energy gaps in SmB6 decrease with pressure before dropping abruptly at T_S. The MFMMS measurements showed a sharp feature at T_S (19 K) for FeSi, but no such feature was observed at T_S 4.5 K for SmB6. The absence of a feature at T_S for SmB6 may be due to experimental issues and will be the subject of a future investigation.
References in corpus (22)
- Topological Insulator Materials
- Topological Kondo Insulators
- Low-temperature surface conduction in the Kondo insulator SmB
- Topological surface state in the Kondo Insulator Samarium Hexaboride
- Quantum oscillations in Kondo Insulator SmB
- Robust Surface Hall Effect and Nonlocal Transport in SmB6: Indication for an Ideal Topological Insulator
- Topological Kondo Insulators
- Unconventional Fermi surface in an insulating state
- Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6
- Quantum Oscillations of Electrical Resistivity in an Insulator
- Signatures of electronic correlations in iron silicide
- Samarium hexaboride: A trivial surface conductor
- Infrared spectroscopic study of phonons coupled to charge excitations in FeSi
- Model for FeSi, a strongly correlated insulator
- Quantum oscillations in flux-grown SmB6 with embedded aluminum
- Robustness of the Insulating Bulk in the Topological Kondo Insulator SmB
- Metallic surface states in a correlated d-electron topological Kondo insulator candidate FeSb2
- Resistivity saturation in Kondo insulators
- Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves
- Electrical detection of surface spin polarization of candidate topological Kondo insulator SmB6
- Pressure-Driven Valence Increase and Metallization in Kondo Insulator CeBiPt
- Hall coefficient diagnostics of surface state in pressurized SmB6
Cited by in corpus (4)
- Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves
- Extraordinary Bulk Insulating Behavior in the Strongly Correlated Materials FeSi and FeSb
- Lieb-Schultz-Mattis constraints for the insulating phases of the one-dimensional SU() Kondo lattice model
- Disordered 2D ferromagnetism at the surface of FeSi