Mapping Conductance and Switching Behavior of Graphene Devices In Situ
arXiv:2203.09217 · doi:10.1002/smtd.202101245
Abstract
Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we present proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC). We introduce a device platform compatible with scanning transmission electron microscopy investigations. We then show how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails). Finally, we show that the SEEBIC imaging technique can detect subtle differences in charge transport through time in non-ohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.
25 pages, 15 figures
References in corpus (6)
- Manipulating low-dimensional materials down to the level of single atoms with electron irradiation
- Silicon-carbon bond inversions driven by 60 keV electrons in graphene
- Towards atomically precise manipulation of 2D nanostructures in the electron microscope
- Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties
- Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene
- Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering