Numerical Model Of Harmonic Hall Voltage Detection For Spintronic Devices

Abstract

We present a numerical macrospin model for harmonic voltage detection in multilayer spintronic devices. The core of the computational backend is based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines high performance with satisfactory, for large-scale applications, agreement with the experimental results. We compare the simulations with the experimental findings in Ta/CoFeB bilayer system for angular- and magnetic field-dependent resistance measurements, electrically detected magnetisation dynamics, and harmonic Hall voltage detection. Using simulated scans of the selected system parameters such as the polar angle $\theta$, magnetisation saturation (${\mu }_{\text{0}}{M}_{\text{s}}$) or uniaxial magnetic anisotropy ($K_{\text{u}}$) we show the resultant changes in the harmonic Hall voltage, demonstrating the dominating influence of the ${\mu }_{\text{0}}{M}_{\text{s}}$ on the first and second harmonics. In the spin-diode ferromagnetic resonance (SD-FMR) technique resonance method the (${\mu }_{\text{0}}{M}_{\text{s}}$, $K_{\text{u}}$) parameter space may be optimised numerically to obtain a set of viable curves that fit the experimental data.

9 pages, 9 figures

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