Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${}_3$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

Accepted version of paper number 38-2 presented at the 67th Annual IEEE International Electron Devices Meeting (IEDM) on 15 December 2021

References in corpus (2)

• Charge transport in dual gated bilayer graphene with Corbino geometry
• Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

Cited by in corpus (3)

• 2024 roadmap on 2D topological insulators
• Tailoring Robust Quantum Anomalous Hall Effect via Entropy-Engineering
• Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications