Optical dipole orientation of interlayer excitons in MoSe-WSe heterostacks
arXiv:2111.01886 · doi:10.1103/PhysRevB.105.035417
Abstract
We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe-WSe heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles.
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- Ultra Localized Optoelectronic Properties of Nanobubbles in 2D Semiconductors
- Ultrafast phonon-driven charge transfer in van der Waals heterostructures
- Exciton-phonon-scattering: A competition between bosonic and fermionic nature of bound electron-hole pairs
- Impact of dark excitons on Förster type resonant energy transfer between dye molecules and atomically thin semiconductors
- Direct visualization of hybrid excitons in van der Waals heterostructures
- Interplay of trapped species and absence of electron capture in Moiré heterobilayers
- Two dimensional semiconductors: optical and electronic properties
- Fermionic vs. bosonic thermalization in the phonon-driven exciton dynamics: An analytic dimensionality study
- Laterally Extended States of Interlayer Excitons in Reconstructed MoSe/WSe Heterostructures