Ambipolar Property of Isolated Hydrogen in Oxide Materials Revealed by Muon

Abstract

The study on the electronic state of muon as pseudo-hydrogen (represented by the elemental symbol Mu) has long been appreciated as one of the few methods to experimentally access the electronic state of dilute hydrogen (H) in semiconductors and dielectrics. Meanwhile, theoretical predictions on the electronic state of H in these materials by first-principles calculations using density functional theory (DFT) do not always agree with the observed states of Mu, standing as an obstacle to integrating the findings of both Mu and H. In this paper, we provide resolution to this problem by a semi-quantitative model that enables systematic understanding of the electronic states of Mu in most oxides.

21 pages, 10 figres

References in corpus (4)

• Formation of hydrogen impurity states in silicon and insulators at low implantation energies
• Direct spectroscopic observation of a shallow hydrogen-like donor state in insulating SrTiO${}_3$
• Local Electronic Structure and Dynamics of Muon-Polaron Complexes in Fe${}_2$O${}_3$
• Polaronic nature of a muonium-related paramagnetic center in SrTiO${}_3$

Cited by in corpus (7)

• DFT+μ: Density Functional Theory for Muon Site Determination
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• Distinguishing Ion Dynamics from Muon Diffusion in Muon Spin Relaxation II -- Extension to Paramagnetic Muons
• Local electronic structure of dilute hydrogen in $\beta$-Ga${}_2$O${}_3$ probed by muons
• Local electronic structure of interstitial hydrogen in MgH${}_2$ inferred from muon study
• Correlation between ferroelectricity and torsional motion of acetyl groups in tris(4-acetylphenyl)amine observed by muon spin relaxation
• Local electronic structure and dynamics of hydrogen in ${\text{CeO}}_2$