Electronic structure of the muonium center as a shallow donor in ZnO
arXiv:cond-mat/0112450 · doi:10.1103/PhysRevLett.89.255505
Abstract
The electronic structure and the location of muonium centers (Mu) in single-crystalline ZnO were determined for the first time. Two species of Mu centers with extremely small hyperfine parameters have been observed below 40 K. Both Mu centers have an axial-symmetric hyperfine structure along with a [0001] axis, indicating that they are located at the AB_{O,//} and BC_{//} sites. It is inferred from their small ionization energy (~6 meV and 50 meV) and hyperfine parameters (~10^{-4} times the vacuum value) that these centers behave as shallow donors, strongly suggesting that hydrogen is one of the primary origins of n type conductivity in as-grown ZnO.
4 pages, 4 figures, submitted to PRL
Cited by in corpus (11)
- Muonium as a shallow center in GaN
- Superconductivity induced by hydrogen anion substitution in 1111-type iron arsenides
- Toward the computational prediction of muon sites and interaction parameters
- Electronic structure of shallow donor state associated with muonium in rutile TiO
- Electronic structure of Mu-complex donor state in rutile TiO
- Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon
- Ambipolar Property of Isolated Hydrogen in Oxide Materials Revealed by Muon
- Nuclear magnetic resonance of ion implanted Li in ZnO
- Negatively Charged Muonium and Related Centers in Solids
- First principle investigation of hydrogen behavior in M doped CuO (M Na, Li and Ti)
- Local electronic structure of dilute hydrogen in -MnO