Strain-induced enhancement of $T_c$ in infinite-layer Pr${}_{0.8}$Sr${}_{0.2}$NiO${}_2$ films

Abstract

The mechanism of unconventional superconductivity in correlated materials remains a great challenge in condensed matter physics. The recent discovery of superconductivity in infinite-layer nickelates, as analog to high-Tc cuprates, has opened a new route to tackle this challenge. By growing 8 nm Pr0.8Sr0.2NiO2 films on the (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate, we successfully raise the transition temperature Tc from 9 K in the widely studied SrTiO3-substrated nickelates into 15 K. By combining x-ray absorption spectroscopy with the first-principles and many-body simulations, we find a positive correlation between Tc and the pre-edge peak intensity, which can be attributed to the hybridization between Ni and O orbitals induced by the strain. Our result suggests that structural engineering can further enhance unconventional superconductivity, and the charge-transfer property plays a crucial role in the pairing strength.

8 pages, 4 figures

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Cited by in corpus (11)

• Resolving the Electronic Ground State of La3Ni2O7-δ Films
• Superconductivity in PrNiO2 infinite-layer nickelates
• On the origin of topotactic reduction effect for superconductivity in infinite-layer nickelates
• Probing Stress and Magnetism at High Pressures with Two-Dimensional Quantum Sensors
• Two Distinct Charge Orders in Infinite-layer PrNiO2+δ revealed by Resonant X-ray Diffraction
• Unraveling p-type and n-type interfaces in Superconducting Infinite-Layer Nickelate thin films
• Electronic correlations and spin-charge-density stripes in double-layer La${}_3$Ni${}_2$O${}_7$
• Spin-glass state in nickelate superconductors
• Hubbard-$U$-corrected electron-phonon interactions in strongly correlated materials via the finite-displacement method
• Effect of doping on the electronic structure, orbital-dependent renormalizations, and magnetic correlations in bilayer La${}_3$Ni${}_2$O${}_7$
• Achieving superconductivity in infinite-layer nickelate thin films by aluminum sputtering deposition