Hubbard--corrected electron-phonon interactions in strongly correlated materials via the finite-displacement method
arXiv:2605.20985 · doi:10.1016/j.mtphys.2026.102192
Abstract
Although the density functional theory plus Hubbard correction method (DFT+) is broadly used to study electronic structure of strongly correlated materials, the extension of this method to electron-phonon matrices has received limited attention. Here, we implement an algorithm that integrates DFT+ method with the finite-displacement method for the calculations of phonons and electron-phonon matrices. The Hubbard corrections are applied not only to electronic and phonon structures, but, more importantly, also to electron-phonon matrices. We demonstrate our algorithm in two prototypical correlated materials: infinite-layer nickelates LaNiO and ruthenium dioxide RuO. We find that: i) While the Hubbard corrections weakly increase the electron-phonon interaction of 20% hole-doped LaNiO, its total electron-phonon coupling remains small and is insufficient to account for the observed superconducting transition temperature of about 10-30 K. Our results contrast with the recent work showing that the full GW corrections yield an elevated electron-phonon coupling of 20% hole-doped LaNiO five times larger than its DFT value. We attribute this discrepancy to the differences in the Fermi surface topology between DFT+ and GW methods. ii) The inclusion of Hubbard corrections eliminates the imaginary phonon modes of RuO under strain on the TiO substrate and substantially reduces the electron-phonon coupling. Our results alleviate the discrepancy between the reported large theoretical electron-phonon coupling and the low superconducting transition temperature observed experimentally. Our work provides an algorithm that fully includes the Hubbard corrections on electron-phonon properties of correlated materials, and highlights the importance of Fermi surface shape and correlation effects on phonon spectrum and electron-phonon matrices.
30 pages, 8 figures
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