Long-range transport of 2D excitons with acoustic waves
arXiv:2108.01773 · doi:10.1038/s41467-022-29042-9
Abstract
Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 mm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.
16 pages, 5 figures
References in corpus (8)
- Two-Dimensional Material Nanophotonics
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- Exciton Binding Energy of Monolayer WS2
- Evidence of high-temperature exciton condensation in 2D atomic double layers
- Van der Waals Heterostructure Polaritons with moiré-Induced Nonlinearity
- Drift mobility of long-living excitons in coupled GaAs quantum wells
- Electrically controllable router of interlayer excitons
Cited by in corpus (9)
- Interlayer Exciton Diode and Transistor
- Extended spatial coherence of interlayer excitons in MoSe/WSe heterobilayers
- Transport and localization of indirect excitons in a van der Waals heterostructure
- Kapitza-resistance-like exciton dynamics in atomically flat MoSe-WSe lateral heterojunction
- The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS for Broadband Photodetection
- Acousto-drag photovoltaic effect by piezoelectric integration of two-dimensional semiconductors
- Gate-tunable quantum acoustoelectric transport in graphene
- Coherent detection of the oscillating acoustoelectric effect in graphene
- Time-domain study of coupled collective excitations in quantum materials