Electrically controllable router of interlayer excitons
arXiv:1911.12061
Abstract
Optoelectronic devices which allow rerouting, modulation and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for such devices are excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons, because of their long lifetime. Here we demonstrate excitonic transistor and router based on bilayer of WSe2. Due to their strong dipole moment, excitons in bilayer WSe2 can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides - naturally stacked bilayer offers long exciton lifetime, smaller non-radiative losses, and are much simpler in fabrication.
References in corpus (13)
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Moiré Excitons in Van der Waals Heterostructures
- Signatures of moiré-trapped valley excitons in MoSe/WSe heterobilayers
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
- Determination of band alignment in the single layer MoS2/WSe2 heterojunction
- Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
- High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors
- Giant Zeeman splitting inducing near-unity valley polarization in van der Waals heterostructures
- Electrical tuning of layer-polarized exciton gases in WSe2 bilayers
- Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
- Exciton dynamics in WSe2 bilayers