Electrically tunable room-temperature ferromagnetism in CrBr${}_3$

Abstract

The recent discovery of magnetic ordering in two-dimension has lead to colossal efforts to find atomically thin materials that order at high temperatures. However, due to fundamental spin fluctuation in reduced dimension, the room-temperature ferromagnetism remains elusive. Here, we report a dramatic manipulation of magnetic ordering up to room temperature in the monolayer CrBr${}_3$, within the first-principles Heisenberg XXZ model. The exchange and anisotropic magnetic interactions are externally modulated by a gate-induced charge carrier doping that triggers a nontrivial phase diagram. High-temperature ferromagnetism is associated with a substantial increase in both effective ferromagnetic exchange and overall magnetic anisotropy under experimentally attainable hole doping. In contrast, electron doping quickly switches the magnetic easy axis. The gate-tuneable room temperature ferromagnetism in CrBr${}_3$ presents new possibilities in electrically controlled spintronic and magnetoelectric devices based on atomically thin crystals.

6 pages, 3 figures, supplementary information

References in corpus (7)

• Magnetic 2D materials and heterostructures
• Direct photoluminescence probing of ferromagnetism in monolayer two-dimensional CrBr3
• Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides
• VI3 - a new layered ferromagnetic semiconductor
• Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3
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Cited by in corpus (2)

• Magnetic Anisotropy in Two-dimensional van der Waals Magnetic Materials and Their Heterostructures: Importance, Mechanisms, and Opportunities
• High temperature antiferromagnetism in ultrathin SrRu2O6 nanosheets