Signature of topological non-trivial band structure in Ta${}_3$SiTe${}_6$

Abstract

The study of topology protected electronic properties is a fascinating topic in present day condensed matter physics research. New topological materials are frequently being proposed and explored through various experimental techniques. Ta${}_3$SiTe${}_6$ is a newly predicted topological semimetal with fourfold degenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and an hourglass Dirac loop, when SOC is included. Recent angle-resolved photoemission spectroscopy study in this material, has also confirmed Dirac like dispersions and two nodal-lines near the Fermi energy, protected by nonsymmorphic glide mirror symmetry. In this work, we present the detailed magnetotransport properties of single crystalline Ta${}_3$SiTe${}_6$. A nonsaturating magnetoresistance has been observed. Hall measurements reveal hole type charge carriers with high carrier density and a moderate value of carrier mobility. Furthermore, we report a robust planar Hall effect, which persists up to high temperatures. These results validate the nontrivial nature of the electronic band structure.

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• Chiral anomaly and positive longitudinal magnetoresistance in the type-II Dirac semimetals $A_x$PdTe${}_2$ (\textit{A} = Cu, Ag)
• Topological semimetal phases in a family of monolayer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) with abundant nodal lines and nodes