Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Abstract

We investigate the electronic structure of tungsten ditelluride (WTe${}_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe${}_2$ and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe${}_2$ is an electronic 3D material and the anisotropy decreases as thickness decreases.

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Cited by in corpus (5)

• Control over Berry Curvature Dipole with Electric Field in WTe2
• Two Types of 3D Quantum Hall Effects in Multilayer WTe${}_2$
• Temperature-driven changes in the Fermi surface of graphite
• Quantum oscillation study of the large magnetoresistance in Mo substituted WTe${}_2$ single crystals
• Probing the topological protection of edge states in multilayer tungsten ditelluride with the superconducting proximity effect