Charge dynamics in magnetically disordered Mott insulators

Abstract

With the aid of both a semi-analytical and a numerically exact method we investigate the charge dynamics in the vicinity of half-filling in the one- and two-dimensional $t$-$J$ model derived from a Fermi-Hubbard model in the limit of large interaction $U$ and hence small exchange coupling $J$. The spin degrees of freedom are taken to be disordered. So we consider the limit $0<J\ll T\ll W$ where $W$ is the band width. We focus on evaluating the spectral density of a single hole excitation and the charge gap which separates the upper and the lower Hubbard band. One of the key findings is the evidence for the absence of sharp edges of the Hubbard band, instead Gaussian tails appear.

References in corpus (11)

• The Kernel Polynomial Method
• Nonequilibrium quantum dynamics of a charge carrier doped into a Mott insulator
• Electron spectra close to a metal-to-insulator transition
• Numerical approach to low-doping regime of the t-J model
• Systematic Mapping of the Hubbard Model to the Generalized t-J Model
• Dynamical Transition in Interaction Quenches of the One-Dimensional Hubbard Model
• Exact solution of the infinite-U Hubbard problem and other models in one dimension
• The Mott insulator - 10th order perturbation theory extended to infinite order using QMC
• Derivation of the t-J model for finite doping
• Thermodynamics of the one-dimensional half-filled Hubbard model in the spin-disordered regime
• Probing thermalization in quenched (non-)integrable Fermi-Hubbard models

Cited by in corpus (2)

• Back-reaction and correlation effects on pre-thermalization in Mott-Hubbard systems
• Attraction versus repulsion between doublons or holons in Mott-Hubbard systems