Large Microwave Inductance of Granular Boron-Doped Diamond Superconducting Films
arXiv:2103.14738 · doi:10.1063/5.0051227
Abstract
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully-gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.
References in corpus (19)
- Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble
- Magnetic Penetration Depth in Unconventional Superconductors
- Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature
- Measurement of Resonant Frequency and Quality Factor of Microwave Resonators: Comparison of Methods
- Tunable superconducting nanoinductors
- Titanium Nitride Films for Ultrasensitive Microresonator Detectors
- Microwave Penetration Depth and Quasiparticle Conductivity in PrFeAsO_1-y Single Crystals : Evidence for a Full-Gap Superconductor
- Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films
- Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators
- Circuit Quantum Electrodynamics of Granular Aluminum Resonators
- Measurements of the absolute value of the penetration depth in high- superconductors using a tunnel diode resonator
- Tunneling Spectroscopy and Vortex Imaging in Boron-Doped Diamond
- Coherent Flux Tunneling Through NbN Nanowires
- Low-energy electrodynamics of superconducting diamond
- Microresonators fabricated from high-kinetic-inductance Aluminum films
- High-Temperature Conventional Superconductivity in the Boron-Carbon system: Material Trends
- Spatially-Correlated Microstructure and Superconductivity in Polycrystalline Boron-Doped Diamond
- High-pressure behavior of superconducting boron-doped diamond
- Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K