Spontaneous time reversal symmetry breaking at individual grain boundaries in graphene
arXiv:2102.05099 · doi:10.1103/PhysRevLett.126.206803
Abstract
Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing, and hence formation of local magnetic moments, below K, we observe complete lifting of TRS at high carrier densities (cm) and low temperature ( K). An unprecedented thirty times reduction in the UCF magnitude with increasing doping density further supports the possibility of an emergent frozen magnetic state at the GBs. Our experimental results suggest that realistic GBs of graphene can be a promising resource for new electronic phases and spin-based applications.
References in corpus (14)
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Weak localisation magnetoresistance and valley symmetry in graphene
- Electronic transport in polycrystalline graphene
- Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Effects of topological defects and local curvature on the electronic properties of planar graphene
- RKKY Interaction in Graphene from Lattice Green's Function
- Tuning Kondo physics in Graphene with gate voltage
- Experimental evidence of chiral symmetry breaking in Kekulé-ordered graphene
- Inducing Kondo Screening of Vacancy Magnetic Moments in Graphene with Gating and Local Curvature
- Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
- Electronic coherence in metals: comparing weak localization and time-dependent conductance fluctuations
- Quantum coherence in a ferromagnetic metal: time-dependent conductance fluctuations
Cited by in corpus (6)
- Resonant tunneling in disordered borophene nanoribbons with line defects
- Non-uniform magnetic field as a booster for quantum speed limit: faster quantum information processing
- Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2
- Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified C graphene
- First Principles Study of Electronic Structure and Transport in Graphene Grain Boundaries
- Weak localization and universal conductance fluctuations in large area twisted bilayer graphene