Colossal intrinsic exchange bias in epitaxial CoFe2O4/Al2O3 thin films
arXiv:2102.03048 · doi:10.1103/PhysRevB.103.224405
Abstract
In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of intrinsic exchange or a ferromagnetic material combined with an antiferromagnet. The analysis of structure, magnetism and electronic states corroborate that there is an interfacial layer CoO between the CoFe2O4(111) thin film and the Al2O3(0001) substrate. The power-law thickness dependence of the intrinsic exchange bias verifies its interfacial origin. This work suggests interfacial engineering can be an effective route for achieving large exchange bias.
15 pages, 5 figures
References in corpus (1)
Cited by in corpus (3)
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- Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface
- Intrinsic Exchange Bias from Interfacial Reconstruction in an Epitaxial NixCoyFe3-x-yO4(111)/α-Al2O3(0001) Thin Film Family