activity
20052026
most citedRobust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics

617 citations · 1k across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2026

Switchable circular dichroism and ionic migration dominated charge transport in a chiral spin crossover polymer

M Zaid Zaz, Sartaz Sakib, Wai Kiat Chin +6

We demonstrate thermally switchable chiroptical activity in a chiral spin crossover (SCO) material, where circular dichroism is significant in the low spin state but quenched in th…

cond-mat.mtrl-sci2023★ 2 cited

Post deposition interfacial Néel temperature tuning in magnetoelectric B:Cr2O3

Ather Mahmood, Jamie Weaver, Syed Qamar Abbas Shah +4

Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven π/2 rotation of the Néel ve…

cond-mat.mtrl-sci2023★ 10 cited

Interfacial and Surface Magnetism in Epitaxial NiCo2O4(001)/MgAl2O4 Films

Corbyn Mellinger, Xiao Wang, Arjun Subedi +6

NiCo2O4 (NCO) films grown on MgAl2O4 (001) substrates have been studied using magnetometry, x-ray magnetic circular dichroism (XMCD) based on x-ray absorption spectroscopy, and spi…

cond-mat.mtrl-sci2023

Intrinsic Exchange Bias from Interfacial Reconstruction in an Epitaxial NixCoyFe3-x-yO4(111)/α-Al2O3(0001) Thin Film Family

Detian Yang, Yaohua Liu, Xiaoshan Xu

Intrinsic exchange bias is known as the unidirectional exchange anisotropy that emerges in a nominally single-component ferro-(ferri-)magnetic system. In this work, with magnetic a…

cond-mat.mtrl-sci2021★ 13 cited

Colossal intrinsic exchange bias in epitaxial CoFe2O4/Al2O3 thin films

Detian Yang, Yu Yun, Arjun Subedi +4

In this work, we demonstrate a massive intrinsic exchange bias (3 kOe) in epitaxial CoFe2O4(111) thin films deposited on Al2O3(0001) substrates. This exchange bias is indicative of…

cs.ET2020

MERAM: Non-Volatile Cache Memory Based on Magneto-Electric FETs

Shaahin Angizi, Navid Khoshavi, Andrew Marshall +2

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory application…