Precision measurements of electric-field-induced frequency displacements of an ultranarrow optical transition in ions in a solid

Abstract

We report a series of measurements of the effect of an electric field on the frequency of the ultranarrow linewidth ${}^7{F}_0\to$ ${}^5{D}_0$ optical transition of $\mathrm{E}{\mathrm{u}}^{3+}$ ions in an ${\mathrm{Y}}_2\mathrm{Si}{\mathrm{O}}_5$ matrix at cryogenic temperatures. We provide linear Stark coefficients along two dielectric axes and for the two different substitution sites of the $\mathrm{E}{\mathrm{u}}^{3+}$ ions, with an unprecedented accuracy, and an upper limit for the quadratic Stark shift. The measurements, which indicate that the electric field sensitivity is a factor of seven larger for site 1 relative to site 2 for a particular direction of the electric field are of direct interest both in the context of quantum information processing and laser frequency stabilization with rare-earth doped crystals, in which electric fields can be used to engineer experimental protocols by tuning transition frequencies.

https://aip.scitation.org/doi/full/10.1063/5.0025356

References in corpus (5)

• Multi-mode and long-lived quantum correlations between photons and spins in a crystal
• Double-heterodyne probing for ultra-stable laser based on spectral hole burning in a rare-earth doped crystal
• Rapid cooling of a strain-coupled oscillator by optical phaseshift measurement
• Multi-mode technique for the determination of the biaxial Y2SiO5 permittivity tensor from 300 to 6 Kelvin
• Inhomogeneous response of an ion ensemble from mechanical stress

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