Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene

Abstract

The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity is similar to that of other materials including Si, InGaAs, GaN, and diamond-based FETs. However, the pulse detection results indicated a very short response time, which favors the rapid/high-sensitively detection. The analysis on the mobility dependence of the response time revealed the same detection regimes as the traditional semiconductor materials, i.e. the non-resonant (collision dominated) regime, the resonant ballistic regime, and the viscous regime. When the kinematic viscosity (ν) is above a certain critical viscosity value, νNR, the plasmonic FETs always operates in the viscous non-resonant regime regardless of channel length (L). In this regime, the response time rises monotonically with the increase of L. When ν < νNR, the plasmonic resonance can be reached in a certain range of L (i.e. the resonant window). Within this window, the carrier transport is ballistic. For a sufficiently short channel, the graphene devices would always operate in the non-resonant regime regardless of the field-effect mobility, corresponding to another viscous regime. The above work mapped the operating regimes of graphene plasmonic FETs, and demonstrated the significance of the viscous effects for the graphene plasmonic detection. These results could be used for the extraction of the temperature dependences of viscosity in graphene.

15 pages, 11 figures

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Graphene plasmonics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Graphene Plasmonics: Challenges and Opportunities
• Graphene field effect transistors as room-temperature Terahertz detectors
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Hydrodynamics of electrons in graphene
• Hydrodynamics in graphene: Linear-response transport
• Terahertz Plasmonic Detector Controlled by Phase Asymmetry

Cited by in corpus (4)

• Plasmonic quantum nonlinear Hall effect in noncentrosymmetric 2D materials
• Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling
• THz detection and amplification using plasmonic Field Effect Transistors driven by DC drain currents
• TeraFET terahertz detectors with spatially non-uniform gate capacitances