Tunable electronic properties and electric-field-induced phase transition in phosphorene/graphene heterostructures

Abstract

The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical properties. Using the tight-binding approach and the Green's function method, we investigate the electronic properties of armchair-edged lateral phosphorene/graphene heterostructures, which are either semiconductor/semiconductor or semiconductor/metal heterostructures, depending on the width of graphene ribbon. It is found that the system is narrow-gapped, and the bandgap can be modulated by tuning the size of the domains. Besides, the analysis of the bandgap variation against the width of the component phosphorene ribbon indicates that, in semiconductor/metal heterostructure, phosphorene ribbon does not induce any electronic state near the Fermi level, suggesting that the suppressed electron transport should be attributed to the hole transfer across the interface. Furthermore, we show that the transverse electric field can significantly diversify the electronic behavior of the heterostructure, i.e., the heterostructure undergoes the semiconductor-metal phase transition. Moreover, tuning the transverse electric field yields an intriguing possibility that the system can undergo a topological phase transition from a band insulator to a topological insulator.

arXiv comment21 pages, 6 figures

References in corpus (25)

• The electronic properties of graphene
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Van der Waals heterostructures
• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• Energy Band Gap Engineering of Graphene Nanoribbons
• Chiral tunneling and the Klein paradox in graphene
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
• Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
• Electronic States of Graphene Nanoribbons
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Superior mechanical flexibility of phosphorene and few-layer black phosphorus
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
• Topological Insulator and Helical Zero Mode in Silicene under Inhomogeneous Electric Field
• Quantum transport of massless Dirac fermions in graphene
• Phosphorene nanoribbons, nanotubes and van der Waals multilayers
• Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst
• The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
• Molecular circuits based on graphene nano-ribbon junctions
• Band alignment of two-dimensional lateral heterostructures
• Electrical and thermal transport in coplanar polycrystalline graphene-hBN heterostructures
• Thermal rectification and interface thermal resistance in hybrid pillared-graphene and graphene: A molecular dynamics approach
• Optical Transitions and Localized Edge States in Skewed Phosphorene Nanoribbons

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