$Mg_xZn_{1-x}O$ contact to $CuGa_3Se_5$ absorber for photovoltaic and photoelectrochemical devices

Imran S. Khan; Christopher P. Muzzillo; Craig L. Perkins; Andrew G. Norman; James Young; Nicolas Gaillard; Andriy Zakutayev

paper

$M g_{x} Z n_{1 - x} O$ contact to $C u G a_{3} S e_{5}$ absorber for photovoltaic and photoelectrochemical devices

arXiv:2010.01635

Abstract

$C u G a_{3} S e_{5}$ is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact layers used with other chalcopyrite absorbers are not suitable for $C u G a_{3} S e_{5}$ due to the higher position of its conduction band minimum. $M g_{x} Z n_{1 - x} O$ is a transparent oxide with adjustable band gap and conduction band position as a function of magnesium composition, but its direct application is hindered by $C u G a_{3} S e_{5}$ surface oxidation. Here, $M g_{x} Z n_{1 - x} O$ is investigated as a contact (n-type buffer or window) material to $C u G a_{3} S e_{5}$ absorbers pretreated in $C d^{2 +}$ solution, and an onset potential close to 1 V vs RHE in 10 mM hexaammineruthenium (III) chloride electrolyte is demonstrated. The $C d^{2 +}$ surface treatment changes the chemical composition and electronic structure of the $C u G a_{3} S e_{5}$ surface, as demonstrated by photoelectron spectroscopy measurements. The performance of $C u G a_{3} S e_{5}$ absorber with $C d^{2 +}$ treated surface in the solid-state test structure depends on the Zn/Mg ratio in the $M g_{x} Z n_{1 - x} O$ layer. The measured open circuit voltage close to 1 V is promising for tandem PEC water splitting with $C u G a_{3} S e_{5}$ / $M g_{x} Z n_{1 - x} O$ top cells.

Mgx​Zn1−x​O contact to CuGa3​Se5​ absorber for photovoltaic and photoelectrochemical devices

Abstract

$M g_{x} Z n_{1 - x} O$ contact to $C u G a_{3} S e_{5}$ absorber for photovoltaic and photoelectrochemical devices