147 citations · 234 across the 8 of their papers we have counts for
8 papers
Thin film TaAs: developing a platform for Weyl semimetal devices
Jocienne N. Nelson, Anthony D. Rice, Rafal Kurleto +12
MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wid…
Designing low-cost TaC virtual substrates for epitaxy
Dennice M. Roberts, Andrew Norman, Moira K. Miller +1
is a critical ultra-wide bandgap material for optoelectronics, but the deposition of thick, high quality epitaxial layers has been hindered by a lack of lattice-mat…
contact to absorber for photovoltaic and photoelectrochemical devices
Imran S. Khan, Christopher P. Muzzillo, Craig L. Perkins +4
is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact…
Heteroepitaxial integration of ZnGeN2 on GaN buffers using molecular beam epitaxy
M. Brooks Tellekamp, Celeste L. Melamed, Andrew G. Norman +1
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly…
III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers
Adele C. Tamboli, Maikel F. A. M. van Hest, Myles A. Steiner +5
We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent…
Solar energy conversion properties and defect physics of ZnSiP
Aaron D. Martinez, Emily L. Warren, Prashun Gorai +12
Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoe…