514 citations · 536 across the 7 of their papers we have counts for
8 papers
Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance
Shahadat H. Sohel, Ramchandra Kotecha, Imran S Khan +4
-GaO based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5…
Spectrum of Landau Levels in GaAs Quantum Wells
Imran Khan, Bipin Singh Koranga, Sunil Kumar
We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. Thi…
contact to absorber for photovoltaic and photoelectrochemical devices
Imran S. Khan, Christopher P. Muzzillo, Craig L. Perkins +4
is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact…
Growth and Characterization of Homoepitaxial -GaO Layers
M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2
-GaO is a next-generation ultra wide bandgap semiconductor (E = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…
Wide band gap chalcogenide semiconductors
Rachel Woods-Robinson, Yanbing Han, Hanyu Zhang +4
Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentrat…
COMBIgor: data analysis package for combinatorial materials science
Kevin R. Talley, Sage R. Bauers, Celeste L. Melamed +9
Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to…